首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   807篇
  免费   96篇
  国内免费   53篇
化学   189篇
力学   25篇
数学   75篇
物理学   667篇
  2023年   17篇
  2022年   12篇
  2021年   18篇
  2020年   12篇
  2019年   15篇
  2018年   11篇
  2017年   15篇
  2016年   32篇
  2015年   19篇
  2014年   39篇
  2013年   47篇
  2012年   40篇
  2011年   38篇
  2010年   59篇
  2009年   66篇
  2008年   63篇
  2007年   69篇
  2006年   43篇
  2005年   35篇
  2004年   29篇
  2003年   32篇
  2002年   30篇
  2001年   42篇
  2000年   26篇
  1999年   27篇
  1998年   9篇
  1997年   8篇
  1996年   8篇
  1995年   8篇
  1994年   14篇
  1993年   10篇
  1992年   5篇
  1991年   6篇
  1990年   6篇
  1989年   8篇
  1988年   3篇
  1987年   9篇
  1986年   3篇
  1985年   3篇
  1984年   4篇
  1983年   2篇
  1982年   2篇
  1981年   4篇
  1980年   1篇
  1979年   2篇
  1978年   1篇
  1975年   1篇
  1974年   1篇
  1973年   2篇
排序方式: 共有956条查询结果,搜索用时 125 毫秒
1.
余先伦  杨伯君  于丽 《光子学报》2006,35(2):161-165
对Cr4+∶YAG固体激光器的吸收效率、量子效率、储存效率和提取效率等本征效率进行了分析.Cr4+∶YAG晶体的吸收截面、发射截面、上能级寿命和激活离子浓度等对激光器的本征效率有很大的影响.提高Cr4+∶YAG晶体的光学品质和激活离子的掺杂浓度,优化泵浦源的运转波长和激光腔的设计都能显著改善Cr4+∶YAG固体激光器的本征效率.  相似文献   
2.
本文从分析相变电阻率 ρP 和磁通蠕动电阻率 ρF 出发 ,指出当T小于某一温度T0 时 ,ρF>ρP,而当T >T0 时 ,ρF 远小于 ρP,并进一步分析了 ρF 与 ρP 随温度的变化率分布图 ,得出磁通蠕动电阻率 ρF 随温度的变化率分布图跟微波响应曲线具有相似的分布特征 ,结果表明 :高温超导体的非平衡微波响应机制可能与磁通涡旋的激发有关 .  相似文献   
3.
We present results from an extended magneto-optical (MO) analysis of two samples cut from high-density pellets of MgB2. The first sample was studied in order to show that no matter how large the sample is and despite the bulk granularity, the material enters into a critical state in a crystal-like fashion. The second sample was chosen for the quantitative analysis. A numerical approach based on an inverted 2D Biot-Savart model was used to calculate the current paths across the homogeneous polycrystalline bulk, as well as in the vicinity and across some morphological defects. Local current densities in the homogeneous part were estimated as a function of the applied magnetic field at different temperatures, in three regimes: below full penetration, at full penetration and above full penetration, respectively. A hypothesis of interpretation of the apparent absence of magnetic granularity inside the polycrystalline microstructure is presented. It is related to a critical state likely reached by a network of strongly coupled Josephson junctions. Received 31 May 2001 and Received in final form 5 December 2001  相似文献   
4.
介绍用Josephson结电子模拟器在政党温度下,模拟测量磁通量子2e/h,用模拟器来研究Josephosn结的特性。该实验可作为普通物理实验中课题设计实验的一个内容。  相似文献   
5.
The flat voltage noise component of current biased, high-transparency Nb/AlOx/Nb superconducting tunnel junctions has been investigated at frequencies up to 70 kHz. Several aspects of the analyzed phenomena suggest the presence of current noise effects induced by the discreteness of the charge carriers. At subgap voltages, where excess currents occur, a behavior coherent with a multiple Andreev reflection-assisted transport through the tunnel barrier has been found. However, the measured charge values exceed any theoretical prediction.  相似文献   
6.
Usually, numerical self-consistent calculations predict a much larger intrinsic bistability region than actually is measured in resonant tunneling diodes (RTDs). In addition, numerical calculations have shown that scattering in the well reduces bistability. We used a unified treatment of current flowing from continuum states and emitter quasi-bound states to show numerically and analytically that not only the scattering in the quantum well but also the scattering in the emitter reduces bistability. Moreover, within the Hartree approximation, bistability occurs by tunneling resonantly between emitter quasi-bound state and well quasi-bound state as a pitchfork bifurcation.  相似文献   
7.
A multiwall carbon nanotube crossroads has been fabricated by a manipulation technique using a glass microcapillary, and the low temperature transport properties investigated. The two-terminal conductance of an individual tube shows Tomonaga–Luttinger liquid behavior GTα at high temperature and dI/dVV α at low temperature. However, no evidence of such a power-law behavior is obtained in the four-terminal conductance at the junction, where the conductance shows an almost metallic behavior ‘corrected’ by weak localization. Weak localization would essentially appear in electron states at the junctions of MWNTs.  相似文献   
8.
In this work actin is used to illustrate connection of protein fluorescence characteristics with its structure. On one hand, it has been demonstrated what kind of information about the contribution of each tryptophan residues to the bulk fluorescence spectrum can be obtained from the special analysis of protein three-dimensional structure. On the other hand, potentials of intrinsic fluorescence for elucidation of proteins structure, dynamics and processes of folding-unfolding are shown. In particular, using this method a new essentially unfolded kinetic intermediate state of actin was detected and characterized, and the place of inactivated actin and its kinetic predecessor in the process of folding-unfolding was determined. It has been revealed that inactivated actin is not intermediate state between the native and completely unfolded states, as it has been accepted before, but a result of protein misfolding. On the basis of the obtained data a new model of actin folding-unfolding pathway has been proposed.  相似文献   
9.
s波超导体绝缘层dx2-y2波超导体结的直流Josephson电流   总被引:2,自引:0,他引:2       下载免费PDF全文
李晓薇  董正超  崔元顺 《物理学报》2002,51(6):1360-1365
在s波超导体绝缘层dx2-y2波超导体结(sId)中,考虑到结界面粗糙散射,运用BogoliubovdeGennes(BdG)方程和FurusakiTsukada(FT)电流公式,计算超导结中的准粒子传输系数和直流Josephson电流.结果表明:sId超导结的直流Josephson电流随温度以及结两侧的相位差变化的关系曲线强烈地依赖于d波超导体的晶轴方位;结界面的粗糙散射对Josephson电流有抑制作用 关键词: s/I/d超导结 dx2-y2波超导体 直流Josephson电流  相似文献   
10.
The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号